Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification
DC Field | Value | Language |
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dc.contributor.author | Hong, Won-Eui | - |
dc.contributor.author | Kim, Deok Hoi | - |
dc.contributor.author | Kim, Chi Woo | - |
dc.contributor.author | Ro, Jae-Sang | - |
dc.date.accessioned | 2021-12-15T02:41:49Z | - |
dc.date.available | 2021-12-15T02:41:49Z | - |
dc.date.created | 2021-12-10 | - |
dc.date.issued | 2011-10-31 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19802 | - |
dc.description.abstract | We have investigated the electrical activation in boron doped poly-Si using Hall measurement, 4-point probe, and secondary ion mass spectroscopy. Through doping was conducted using a mass-separated ion implanter with acceleration energies from 20 to 35 keV at doses ranging from 1 x 10(15)/cm(2) to 4 x 10(15)/cm(2), followed by isothermal rapid-thermal-annealing at temperatures ranging from 550 to 650 degrees C. The substrates used were poly-Si, produced by two-shot sequential lateral solidification. Reverse annealing, in which a continuous loss of charge carriers occurs, was observed in boron doped poly-Si. We found that implantation conditions play a critical role on dopant activation as well as annealing conditions. We observed that a certain implantation condition does exist where the sheet resistance is not changed upon activation annealing. Damage recovery encountered in activation annealing seems to be closely related to a reverse-annealing phenomenon. We assume that the defect-concentration profile would be more important to activation behavior of poly-Si than integrated defect-density accumulated in the silicon layer. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | ION DOPING TECHNIQUE | - |
dc.subject | INTERSTITIAL CLUSTERS | - |
dc.subject | SILICON FILMS | - |
dc.title | Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, Jae-Sang | - |
dc.identifier.doi | 10.1016/j.tsf.2011.08.018 | - |
dc.identifier.scopusid | 2-s2.0-80054015706 | - |
dc.identifier.wosid | 000297441200105 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.520, no.1, pp.616 - 622 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 520 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 616 | - |
dc.citation.endPage | 622 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ION DOPING TECHNIQUE | - |
dc.subject.keywordPlus | INTERSTITIAL CLUSTERS | - |
dc.subject.keywordPlus | SILICON FILMS | - |
dc.subject.keywordAuthor | Doping | - |
dc.subject.keywordAuthor | Electrical activation | - |
dc.subject.keywordAuthor | Polycrystalline silicon | - |
dc.subject.keywordAuthor | Thin-film-transistor | - |
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