Bias Stress Effects on Different Dielectric Surfaces of Pentacene Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Hyung, Gun Woo | - |
dc.contributor.author | Koo, Ja-Ryong | - |
dc.contributor.author | Seo, Ji Hoon | - |
dc.contributor.author | Yang, Jin Woo | - |
dc.contributor.author | Lee, Ho Won | - |
dc.contributor.author | Pyo, Sang Woo | - |
dc.contributor.author | Kim, Young Kwan | - |
dc.date.accessioned | 2021-12-15T02:43:28Z | - |
dc.date.available | 2021-12-15T02:43:28Z | - |
dc.date.created | 2021-12-10 | - |
dc.date.issued | 2011-05 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19899 | - |
dc.description.abstract | In this paper, it was demonstrated that pentacene thin-film transistors (TFTs) were fabricated with an organic adhesion layer between an organic semiconductor and a gate insulator. In order to form polymeric film as an adhesion layer, a vapor deposition polymerization (VDP) process was introduced to substitute for the usual spin-coating process. Field effect mobility, threshold voltage, and on/off current ratio in pentacene TFTs with a 15 nm thick organic adhesion layer were about 0.4 cm(2)/Vs, -1 V, and 10(6), respectively. We also demonstrated that threshold voltage strongly depends on the stress time when a gate voltage has been applied for bias stress test. We suggest that a polyimide adhesion layer fabricated by the VDP method can be applied to realize organic TFTs with long-term stability because of lower threshold voltage shifts due to reduced charge trapping at the interface between the pentacene semiconductor and the polyimide layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Bias Stress Effects on Different Dielectric Surfaces of Pentacene Thin-Film Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Kwan | - |
dc.identifier.doi | 10.1166/jnn.2011.3651 | - |
dc.identifier.scopusid | 2-s2.0-84863075548 | - |
dc.identifier.wosid | 000290692400092 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.5, pp.4338 - 4342 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 4338 | - |
dc.citation.endPage | 4342 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | Pentacene Thin Film Transistors | - |
dc.subject.keywordAuthor | Hysteresis | - |
dc.subject.keywordAuthor | Threshold Voltage Shift | - |
dc.subject.keywordAuthor | Adhesion Layer | - |
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