Thermal deformation of glass backplanes during Joule-heating induced crystallization process
DC Field | Value | Language |
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dc.contributor.author | Kim, Dong Hyun | - |
dc.contributor.author | Hong, Won Eui | - |
dc.contributor.author | Ro, Jae Sang | - |
dc.contributor.author | Lee, Seong Hyuk | - |
dc.contributor.author | Park, Seungho | - |
dc.date.accessioned | 2021-12-15T02:44:00Z | - |
dc.date.available | 2021-12-15T02:44:00Z | - |
dc.date.created | 2021-12-10 | - |
dc.date.issued | 2011-02-25 | - |
dc.identifier.issn | 0042-207X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19934 | - |
dc.description.abstract | Large area crystallization of amorphous silicon (a-Si) thin-films on glass backplanes is one of key technologies in manufacturing flat displays of commercial scales. Among various crystallization technologies, Joule-heating induced crystallization (JIC) has been recently introduced and considered as the highly promising one since the whole film of a-Si on glass backplane can be crystallized within tens of microseconds. Based on theoretical investigation accompanied by in-situ and ex-situ experimentations, this study clarified the critical mechanism of the glass backplane deformation during the JIC process. Simulation using a commercial FEM code with one-dimensional conduction and viscoelastic models showed that the local region of which temperature was larger than the glass softening point undergoes structural shrinkage due to stress relaxation and this shrinkage remained permanently even after the process. As a quantification factor for such plastic deformation, the radius of curvature was estimated and compared to the experimental observation. Consequently the pulse duration should be decreased for larger display applications, because the radius of curvature could be considerably increased as the pulse duration was decreased for the same peak temperature of the JIC processes. (C) 2010 Elsevier Ltd. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | EXCIMER-LASER CRYSTALLIZATION | - |
dc.subject | SOLID-PHASE CRYSTALLIZATION | - |
dc.subject | AMORPHOUS-SILICON FILMS | - |
dc.subject | SI FILMS | - |
dc.subject | LPCVD | - |
dc.subject | TECHNOLOGY | - |
dc.subject | TFTS | - |
dc.title | Thermal deformation of glass backplanes during Joule-heating induced crystallization process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, Jae Sang | - |
dc.contributor.affiliatedAuthor | Park, Seungho | - |
dc.identifier.doi | 10.1016/j.vacuum.2010.12.006 | - |
dc.identifier.scopusid | 2-s2.0-79952442814 | - |
dc.identifier.wosid | 000289181700001 | - |
dc.identifier.bibliographicCitation | VACUUM, v.85, no.9, pp.847 - 852 | - |
dc.relation.isPartOf | VACUUM | - |
dc.citation.title | VACUUM | - |
dc.citation.volume | 85 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 847 | - |
dc.citation.endPage | 852 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EXCIMER-LASER CRYSTALLIZATION | - |
dc.subject.keywordPlus | SOLID-PHASE CRYSTALLIZATION | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON FILMS | - |
dc.subject.keywordPlus | SI FILMS | - |
dc.subject.keywordPlus | LPCVD | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordAuthor | Joule-heating | - |
dc.subject.keywordAuthor | Silicon crystallization | - |
dc.subject.keywordAuthor | Thermal deformation | - |
dc.subject.keywordAuthor | Glass backplane | - |
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