Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Won-Eui | - |
dc.contributor.author | Ro, Jae-Sang | - |
dc.date.accessioned | 2021-12-15T02:44:16Z | - |
dc.date.available | 2021-12-15T02:44:16Z | - |
dc.date.created | 2021-12-10 | - |
dc.date.issued | 2011-01-31 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19950 | - |
dc.description.abstract | Joule heating induced crystallization (JIC) was accomplished by applying an electric field to a conductive layer located beneath the amorphous silicon film. This study found that an intense arc is generated at the interface between the silicon and the electrode. The artificial modification of a JIC-sample structure led us to the finding that arc generation is caused by the dielectric breakdown of a SiO2 layer that is sandwiched between the transformed polycrystalline silicon and a conductive layer at high temperatures during Joule heating. (c) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | RAPID CRYSTALLIZATION | - |
dc.subject | GROWTH | - |
dc.title | Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, Jae-Sang | - |
dc.identifier.doi | 10.1016/j.tsf.2010.11.016 | - |
dc.identifier.scopusid | 2-s2.0-78751643660 | - |
dc.identifier.wosid | 000287543300057 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.519, no.7, pp.2371 - 2375 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 519 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 2371 | - |
dc.citation.endPage | 2375 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RAPID CRYSTALLIZATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Joule heating | - |
dc.subject.keywordAuthor | Crystallization | - |
dc.subject.keywordAuthor | Low temperature polycrystalline silicon | - |
dc.subject.keywordAuthor | Active matrix organic light emitting diode | - |
dc.subject.keywordAuthor | Thin film transistors | - |
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