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Enhancement of memory characteristics in bistable chiral splay nematic display mode
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Bae, K.-S. | - |
| dc.contributor.author | Cha, U. | - |
| dc.contributor.author | Kim, J.-H. | - |
| dc.contributor.author | Park, S.J. | - |
| dc.contributor.author | Yu, C.-J. | - |
| dc.date.accessioned | 2021-12-15T04:44:13Z | - |
| dc.date.available | 2021-12-15T04:44:13Z | - |
| dc.date.created | 2021-12-10 | - |
| dc.date.issued | 2011 | - |
| dc.identifier.issn | 0000-0000 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20594 | - |
| dc.description.abstract | We report an enhancement of memory characteristics in a bistable chiral splay nematic (BCSN) display mode with reactive mesogens (RMs). The polymerized RMs give rise to hindrance to relaxation in a memory mode and thus a memory retention time is significantly improved in the BCSN mode. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.title | Enhancement of memory characteristics in bistable chiral splay nematic display mode | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Park, S.J. | - |
| dc.identifier.scopusid | 2-s2.0-84860876381 | - |
| dc.identifier.bibliographicCitation | 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, v.3, pp.1609 - 1611 | - |
| dc.relation.isPartOf | 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 | - |
| dc.citation.title | 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 | - |
| dc.citation.volume | 3 | - |
| dc.citation.startPage | 1609 | - |
| dc.citation.endPage | 1611 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scopus | - |
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Related Researcher
- Park, Sang Ju
- Engineering (Electronic & Electrical Engineering)