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Improvement of the field effect mobility by the nano-scale structure on organic thin film transistor

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dc.contributor.authorJung, H.-
dc.contributor.authorJo, S.I.-
dc.contributor.authorChoi, J.S.-
dc.contributor.authorYu, C.-J.-
dc.contributor.authorKim, J.-H.-
dc.date.accessioned2021-12-15T04:44:25Z-
dc.date.available2021-12-15T04:44:25Z-
dc.date.created2021-12-10-
dc.date.issued2011-
dc.identifier.issn1883-2490-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20604-
dc.description.abstractWe investigate an effect of nano-scale structures onto an insulating layer in organic thin-film transistor (OTFT). The electrical performance of OTFT could be improved by using source/drain nano-scale structures. The nano-scale structure reduces the contact resistance and thus improves the device performances.-
dc.language영어-
dc.language.isoen-
dc.titleImprovement of the field effect mobility by the nano-scale structure on organic thin film transistor-
dc.typeArticle-
dc.contributor.affiliatedAuthorChoi, J.S.-
dc.identifier.scopusid2-s2.0-84870718268-
dc.identifier.bibliographicCitationProceedings of the International Display Workshops, v.1, pp.159 - 162-
dc.relation.isPartOfProceedings of the International Display Workshops-
dc.citation.titleProceedings of the International Display Workshops-
dc.citation.volume1-
dc.citation.startPage159-
dc.citation.endPage162-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
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