Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes
DC Field | Value | Language |
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dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Kang, Jong Mook | - |
dc.contributor.author | Kim, Dong Wook | - |
dc.contributor.author | Choi, Jong Sun | - |
dc.date.accessioned | 2021-12-17T01:42:07Z | - |
dc.date.available | 2021-12-17T01:42:07Z | - |
dc.date.created | 2021-12-16 | - |
dc.date.issued | 2010-09-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20716 | - |
dc.description.abstract | We investigated the effect of the deposition rate of Au source/drain electrodes on the contact resistance of the top-contact organic thin-film transistors (OTFTs). For the formation of source/drain contacts, Au was thermally deposited at the different rates of 0.5, 1.0, 5.0, and 13.0 angstrom/s. With increasing the Au deposition rate, the contact resistance extracted at the gate voltage of -30 V could be reduced from 14 x 10(6) to 2.4 x 10(6) Omega, resulting in the characteristic improvements of the top-contact OTFT. It is also found that the contact resistance significantly affects the off-state currents of the device having the short channel length of 10 pm. The control of the deposition rate of source/drain electrodes is suggested to optimize the contact properties of the top-contact OTFTs as well as the device performance. (C) 2010 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | MOBILITY | - |
dc.title | Contact resistance variation in top-contact organic thin-film transistors with the deposition rate of Au source/drain electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong Sun | - |
dc.identifier.doi | 10.1016/j.tsf.2010.03.168 | - |
dc.identifier.scopusid | 2-s2.0-77956058251 | - |
dc.identifier.wosid | 000282242600020 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.518, no.22, pp.6232 - 6235 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 518 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 6232 | - |
dc.citation.endPage | 6235 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | Organic thin-film transistors | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Vacuum thermal evaporation | - |
dc.subject.keywordAuthor | Surface current | - |
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