Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Kangmin | - |
| dc.contributor.author | Kim, Youngmin | - |
| dc.date.accessioned | 2021-12-17T01:42:19Z | - |
| dc.date.available | 2021-12-17T01:42:19Z | - |
| dc.date.created | 2021-12-16 | - |
| dc.date.issued | 2010-09 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20727 | - |
| dc.description.abstract | We present the intrinsic capacitance characteristics of a pentacene-based polystyrene-gate organic thin-film transistor (OTFT). Intrinsic capacitance values (C(GD), C(GS)) at each terminal of the OTFT were experimentally measured for various frequencies and dc bias voltages. The measured results illustrate that the intrinsic capacitance of an OTFT can be understood by considering a charge control mechanism, suggesting the validity of Meyer's capacitance model for the charge storage effect of OTFTs. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | PENTACENE | - |
| dc.title | Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Youngmin | - |
| dc.identifier.doi | 10.1109/TED.2010.2055312 | - |
| dc.identifier.scopusid | 2-s2.0-77956056274 | - |
| dc.identifier.wosid | 000283138200041 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.9, pp.2344 - 2347 | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.volume | 57 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 2344 | - |
| dc.citation.endPage | 2347 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | PENTACENE | - |
| dc.subject.keywordAuthor | Overlap capacitance of source/drain (S/D) | - |
| dc.subject.keywordAuthor | pentacene organic thin-film transistor (OTFT) | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Young min
- Engineering (Electronic & Electrical Engineering)