Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices

Abstract

This paper presents the effects of the work function of an indium tin oxide (ITO) gate electrode on the electrical characteristics of two pentacene-based field-effect devices metal-insulator-semiconductor (MIS) capacitors and field-effect transistors (FETs). The ITO work function was varied by employing base and acid treatments. Flat-band voltage shifts of the MIS capacitors were found to result from the shift in the work function. The current onset and threshold voltage of the FETs were also found to be influenced by the work function. These results demonstrate the correlation of the flat-band conditions of pentacene-based field-effect devices with the gate electrode work function. (C) 2010 American Institute of Physics. [doi:10.1063/1.3486180]