Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Kim, Hey Min | - |
dc.contributor.author | Kim, Dong Wook | - |
dc.contributor.author | Choi, Jong Sun | - |
dc.date.accessioned | 2021-12-17T01:42:23Z | - |
dc.date.available | 2021-12-17T01:42:23Z | - |
dc.date.created | 2021-12-16 | - |
dc.date.issued | 2010-08-30 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20731 | - |
dc.description.abstract | This paper presents the effects of the work function of an indium tin oxide (ITO) gate electrode on the electrical characteristics of two pentacene-based field-effect devices metal-insulator-semiconductor (MIS) capacitors and field-effect transistors (FETs). The ITO work function was varied by employing base and acid treatments. Flat-band voltage shifts of the MIS capacitors were found to result from the shift in the work function. The current onset and threshold voltage of the FETs were also found to be influenced by the work function. These results demonstrate the correlation of the flat-band conditions of pentacene-based field-effect devices with the gate electrode work function. (C) 2010 American Institute of Physics. [doi:10.1063/1.3486180] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | EFFECT TRANSISTORS | - |
dc.title | Effects of gate electrode work function on electrical characteristics of pentacene-based field-effect devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong Sun | - |
dc.identifier.doi | 10.1063/1.3486180 | - |
dc.identifier.scopusid | 2-s2.0-77956369334 | - |
dc.identifier.wosid | 000282187200063 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.97, no.9 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 97 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EFFECT TRANSISTORS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.