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4H-SiC Avalanche Photodiodes for 280 nm UV Detection
- Issue Date
- May-2010
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- avalanche photodiode; silicon carbide; UV detection
- Citation
- IEICE TRANSACTIONS ON ELECTRONICS, v.E93C, no.5, pp.648 - 650
- Journal Title
- IEICE TRANSACTIONS ON ELECTRONICS
- Volume
- E93C
- Number
- 5
- Start Page
- 648
- End Page
- 650
- ISSN
- 0916-8524
- Abstract
- We designed and fabricated 4H-SiC PIN avalanche photo-diodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of > 80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.
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Related Researcher
- Sung, Hyuk Kee
- Engineering (Electronic & Electrical Engineering)