Realization of interfacial defect-induced photocatalytic gating at the TiO2/ZnO interface
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Mincheol | - |
dc.contributor.author | Park, Byoungnam | - |
dc.date.accessioned | 2021-12-17T02:41:16Z | - |
dc.date.available | 2021-12-17T02:41:16Z | - |
dc.date.created | 2021-12-17 | - |
dc.date.issued | 2022-01-01 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/20967 | - |
dc.description.abstract | We demonstrated and probed interface trap-induced photoelectrochemical sensitization by defect reactions at the TiO2/ZnO interface formed through atomic layer deposition of ZnO. The presence of interfacial defects at the TiO2/ZnO was confirmed through photoluminescence measurement in which green emission was observed. The photoelectrochemical photocurrent (PECP) increased due to interfacial defect-induced charge transfer from ZnO to TiO2 under illumination with a green light, while the PECP decreased under illumination with a solar simulator including UV compared to that without ZnO due to a reduced depletion layer width in the TiO2. We elaborated on the role of the TiO2/ZnO interfacial defects by depleting the total ZnO layer sandwiched by the TiO2/ZnO and the ZnO/electrolyte interfaces, through which the dark current is minimized, and the PECP by interfacial traps is maximized. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | ENHANCEMENT | - |
dc.title | Realization of interfacial defect-induced photocatalytic gating at the TiO2/ZnO interface | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Byoungnam | - |
dc.identifier.doi | 10.1016/j.matlet.2021.130909 | - |
dc.identifier.scopusid | 2-s2.0-85115623260 | - |
dc.identifier.wosid | 000705810100004 | - |
dc.identifier.bibliographicCitation | MATERIALS LETTERS, v.306 | - |
dc.relation.isPartOf | MATERIALS LETTERS | - |
dc.citation.title | MATERIALS LETTERS | - |
dc.citation.volume | 306 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Localized states | - |
dc.subject.keywordAuthor | Defect | - |
dc.subject.keywordAuthor | Charge transfer | - |
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