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Joule-heating induced crystallization for AMOLED TFT-backplanes

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dc.contributor.authorHong, W.-E.-
dc.contributor.authorJang, I.-
dc.contributor.authorJun, C.-S.-
dc.contributor.authorPark, D.J.-
dc.contributor.authorKim, C.S.-
dc.contributor.authorLee, W.P.-
dc.contributor.authorKim, H.D.-
dc.contributor.authorRo, J.-S.-
dc.date.accessioned2021-12-17T04:42:25Z-
dc.date.available2021-12-17T04:42:25Z-
dc.date.created2021-12-16-
dc.date.issued2010-
dc.identifier.issn1738-7558-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21665-
dc.description.abstractA Mo-layer used as a gate electrode was employed as a conductive layer for Joule-heating induced crystallization of patterned active islands of amorphous films. High performance JIC poly-Si TFTs were fabricated using an optimized processing suggested in this work compatible to mass production of AMOLED panels.-
dc.language영어-
dc.language.isoen-
dc.titleJoule-heating induced crystallization for AMOLED TFT-backplanes-
dc.typeArticle-
dc.contributor.affiliatedAuthorRo, J.-S.-
dc.identifier.scopusid2-s2.0-79959943743-
dc.identifier.bibliographicCitationProceedings of International Meeting on Information Display, pp.44 - 45-
dc.relation.isPartOfProceedings of International Meeting on Information Display-
dc.citation.titleProceedings of International Meeting on Information Display-
dc.citation.startPage44-
dc.citation.endPage45-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorAMOLED-
dc.subject.keywordAuthorCrystallization-
dc.subject.keywordAuthorJoule-heating-
dc.subject.keywordAuthorLTPS-
dc.subject.keywordAuthorTFTs-
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