Joule-heating induced crystallization for AMOLED TFT-backplanes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, W.-E. | - |
dc.contributor.author | Jang, I. | - |
dc.contributor.author | Jun, C.-S. | - |
dc.contributor.author | Park, D.J. | - |
dc.contributor.author | Kim, C.S. | - |
dc.contributor.author | Lee, W.P. | - |
dc.contributor.author | Kim, H.D. | - |
dc.contributor.author | Ro, J.-S. | - |
dc.date.accessioned | 2021-12-17T04:42:25Z | - |
dc.date.available | 2021-12-17T04:42:25Z | - |
dc.date.created | 2021-12-16 | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 1738-7558 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21665 | - |
dc.description.abstract | A Mo-layer used as a gate electrode was employed as a conductive layer for Joule-heating induced crystallization of patterned active islands of amorphous films. High performance JIC poly-Si TFTs were fabricated using an optimized processing suggested in this work compatible to mass production of AMOLED panels. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.title | Joule-heating induced crystallization for AMOLED TFT-backplanes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, J.-S. | - |
dc.identifier.scopusid | 2-s2.0-79959943743 | - |
dc.identifier.bibliographicCitation | Proceedings of International Meeting on Information Display, pp.44 - 45 | - |
dc.relation.isPartOf | Proceedings of International Meeting on Information Display | - |
dc.citation.title | Proceedings of International Meeting on Information Display | - |
dc.citation.startPage | 44 | - |
dc.citation.endPage | 45 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | AMOLED | - |
dc.subject.keywordAuthor | Crystallization | - |
dc.subject.keywordAuthor | Joule-heating | - |
dc.subject.keywordAuthor | LTPS | - |
dc.subject.keywordAuthor | TFTs | - |
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