Consideration of polymer-dielectric molecular weight for gate-leakage current in organic field-effect transistors

Abstract

We report on the influence of molecular weight of polystyrene (PS) gate dielectric layer on the performance of pentacene-based organic field-effect transistors (OFET). The gate dielectric layers are fabricated by using different molecular weights of PS. The OFET having the high molecular weights of PS gate dielectric layer exhibits the most pronounced drain currents as well as mobility among the fabricated devices. In this work, the emphasis is based on the significant relation between the surface characteristics of gate dielectric layer and the performance of OFET.