Pentacene thin-film transistor with poly(methyl methacrylate-co-methacrylic acid)/TiO2 nanocomposite gate insulator
DC Field | Value | Language |
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dc.contributor.author | Park, Jaehoon | - |
dc.contributor.author | Lee, Jong Won | - |
dc.contributor.author | Kim, Dong Wook | - |
dc.contributor.author | Park, Bong June | - |
dc.contributor.author | Choi, Hyoung Jin | - |
dc.contributor.author | Choi, Jong Sun | - |
dc.date.accessioned | 2022-01-03T05:41:52Z | - |
dc.date.available | 2022-01-03T05:41:52Z | - |
dc.date.created | 2021-12-28 | - |
dc.date.issued | 2009-11-30 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21770 | - |
dc.description.abstract | A poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-MAA) and titanium dioxide (TiO2) composite was fabricated to use as a gate insulator in pentacene-based organic thin-film transistors (OTFTs). The dispersion stability was confirmed by observing the sedimentation time of TiO2 nanoparticles in the PMMA-co-MAA solution, which is essential to avoid a severe gate-leakage current in OTFTs. From the measured capacitance-frequency characteristics, a dielectric constant value of 4.5 was obtained for the composite film and 33 for the PMMA-co-MAA film. Consequently, we could enhance the field-induced current and reduce the threshold voltage of OTFT by adopting the composite insulator, without augmenting the gate-leakage current. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | FABRICATION | - |
dc.title | Pentacene thin-film transistor with poly(methyl methacrylate-co-methacrylic acid)/TiO2 nanocomposite gate insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong Sun | - |
dc.identifier.doi | 10.1016/j.tsf.2009.07.047 | - |
dc.identifier.scopusid | 2-s2.0-70349852422 | - |
dc.identifier.wosid | 000271776300042 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.518, no.2, pp.588 - 590 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 518 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 588 | - |
dc.citation.endPage | 590 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Organic thin-film transistors | - |
dc.subject.keywordAuthor | Insulator | - |
dc.subject.keywordAuthor | Nanocomposite | - |
dc.subject.keywordAuthor | Gate-leakage current | - |
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