Thermoelectric Characteristics of p-Type (Bi,Sb)(2)Te-3/(Pb,Sn)Te Functional Gradient Materials with Variation of the Segment Ratio
DC Field | Value | Language |
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dc.contributor.author | Oh, Tae-Sung | - |
dc.date.accessioned | 2022-01-03T05:42:55Z | - |
dc.date.available | 2022-01-03T05:42:55Z | - |
dc.date.created | 2021-12-28 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/21833 | - |
dc.description.abstract | The p-type (Bi,Sb)(2)Te-3/(Pb,Sn)Te functional gradient materials (FGMs) were fabricated by hot-pressing mechanically alloyed (Bi0.2Sb0.8)(2)Te-3 and 0.5 at.% Na2Te-doped (Pb0.7Sn0.3)Te powders together at 500A degrees C for 1 h in vacuum. Segment ratios of (Bi,Sb)(2)Te-3 to (Pb,Sn)Te were varied as 3:1, 1.3:1, and 1:1.6. A reaction layer of about 350-mu m thickness was formed at the (Bi,Sb)(2)Te-3/(Pb,Sn)Te FGM interface. Under temperature differences larger than 340A degrees C applied across a specimen, superior figures of merit were predicted for the (Bi,Sb)(2)Te-3/(Pb,Sn)Te FGMs to those of (Bi0.2Sb0.8)(2)Te-3 and (Pb0.7Sn0.3)Te. With a temperature difference of 320A degrees C applied across a specimen, the (Bi,Sb)(2)Te-3/(Pb,Sn)Te FGMs with segment ratios of 3:1 and 1.3:1 exhibited the maximum output powers of 72.1 mW and 72.6 mW, respectively, larger than the 63.9 mW of (Bi0.2Sb0.8)(2)Te-3 and the 26 mW of 0.5 at.% Na2Te-doped (Pb0.7Sn0.3)Te. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | PERFORMANCE | - |
dc.title | Thermoelectric Characteristics of p-Type (Bi,Sb)(2)Te-3/(Pb,Sn)Te Functional Gradient Materials with Variation of the Segment Ratio | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Tae-Sung | - |
dc.identifier.doi | 10.1007/s11664-009-0707-5 | - |
dc.identifier.scopusid | 2-s2.0-67650497000 | - |
dc.identifier.wosid | 000267662500026 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.38, no.7, pp.1041 - 1047 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 38 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1041 | - |
dc.citation.endPage | 1047 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Thermoelectric materials | - |
dc.subject.keywordAuthor | functional gradient materials | - |
dc.subject.keywordAuthor | bismuth telluride | - |
dc.subject.keywordAuthor | lead telluride | - |
dc.subject.keywordAuthor | figure of merit | - |
dc.subject.keywordAuthor | output power | - |
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