Effect of band-to-band tunnelling leakage on 28 nm MOSFET design
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, T. | - |
dc.contributor.author | Kim, Y. | - |
dc.date.accessioned | 2022-01-13T06:44:22Z | - |
dc.date.available | 2022-01-13T06:44:22Z | - |
dc.date.created | 2022-01-04 | - |
dc.date.issued | 2008-01-17 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/22789 | - |
dc.description.abstract | The effect of band-to-band tunnelling leakage on 28 nm MOSFETs is studied using TCAD simulation. For low-standby power applications, the leakage current of the MOSFET is increasingly dominated by GIDL instead of a subthreshold leakage as the S/D extension doping increases. The GIDL current can be reduced by relaxing the lateral abruptness of the drain at the expense of a higher S/D series resistance. Based on the simulated results, we have found that a very limited margin in S/D design is allowed to meet both leakage current and performance requirement for 28 nm MOSFETs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | Effect of band-to-band tunnelling leakage on 28 nm MOSFET design | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Y. | - |
dc.identifier.doi | 10.1049/el:20082596 | - |
dc.identifier.wosid | 000252959500058 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.44, no.2, pp.157 - 159 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 44 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 157 | - |
dc.citation.endPage | 159 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
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