Electrical characteristics of organic thin-film transistors with polyvinylpyrrolidone as a gate insulator
- Authors
- Choi, J.S.
- Issue Date
- 2008
- Keywords
- Insulator; Organic thin-film transistor; Polyvinylpyrrolidone
- Citation
- Journal of Information Display, v.9, no.4, pp.35 - 38
- Journal Title
- Journal of Information Display
- Volume
- 9
- Number
- 4
- Start Page
- 35
- End Page
- 38
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/23421
- DOI
- 10.1080/15980316.2008.9652068
- ISSN
- 1598-0316
- Abstract
- This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with 15.3Å interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 cm2/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs. © 2008 Taylor & Francis Group, LLC.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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