The effects of adhesion layer on electrical characteristics performance in bottom-contact organic thin film transistors

Abstract

We demonstrated that organic thin-film-transistors (OTFTs) can be fabricated by using organic gate insulators using a vapor deposition polymerization (VDP) process. The basic material properties of organic thin-film fabricated by VDP method were investigated and organic thin film was adopted as adhesion layer to investigate electrical characteristics. Thin-film-transistors based on organic semiconductor (OTFTs) have received considerable attention because of their potential application in a variety of industries, since the performance of silicon TFTs can be replaced by OTFTs. For the high-performance OTFTs, it is reported that the grown crystalline characteristics of pentacene are critically correlated with the surface energy for the gate-dielectrics. In this study, instead of polyimide which was well known gate insulators, 6FDA-ODA was used as a polymeric adhesion layer deposited on inorganic gate insulator such as silicon nitride (SiNx), which was formed by vapor deposition polymerization (VDP) instead of spin-coating process. We have investigated the effect of the adhesion layer on the interfacial characteristics between Pentacene and SiNx. And hence, the The electrical characteristics of OTFTs using 6FDA-ODA as an adhesion layer could be compared and analyzed. Also, bottom-contact structure adopting organic thin film fabricated by VDP method was investigated.