Contact resistance variation of top-contact organic thin film transistor with the deposition rate of Au electrode
- Authors
- Kang, J.M.; Park, J.; Kim, H.; Bong, K.W.; Lee, H.J.; Kim, H.M.; Kim, J.H.; Choi, J.S.
- Issue Date
- 2007
- Keywords
- Contact resistance; Organic thin film transistor; Pentacene
- Citation
- AD'07 - Proceedings of Asia Display 2007, v.2, pp.1678 - 1681
- Journal Title
- AD'07 - Proceedings of Asia Display 2007
- Volume
- 2
- Start Page
- 1678
- End Page
- 1681
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24286
- ISSN
- 0000-0000
- Abstract
- The performance of organic thin film transistors (OTFTs) can be influenced by geometrical or extrinsic factors. Among these factors, contact resistance between source/drain electrodes and organic semiconductor layer is one of the critical parameters for the performance of OTFTs. In this study, contact resistances were extracted from the measured characteristics of top-contact OTFTs with various channel lengths for different deposition rates of Au for the source/drain contacts. It is observed that the extracted contact resistances were on the range of about 106- 1011 Ω with the significant gate-bias dependence and could be lowered with increasing the deposition rate of Au.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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