Characteristics of poly(vinyl acetate) as a gate insulating material in organic thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Sung, J. H. | - |
dc.contributor.author | Park, S. J. | - |
dc.contributor.author | Park, J. H. | - |
dc.contributor.author | Choi, H. J. | - |
dc.contributor.author | Choi, J. S. | - |
dc.date.accessioned | 2022-02-07T05:41:59Z | - |
dc.date.available | 2022-02-07T05:41:59Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2006-06-01 | - |
dc.identifier.issn | 0379-6779 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/24543 | - |
dc.description.abstract | We report the physical characteristics of poly(vinyl acetate) (PVAc) as a polymeric gate insulator in the organic thin film transistors (OTFTs), in which the OTFTs require not only a simple packing process with a relatively low cost compared to conventional inorganic electronics but also their compatibility with flexible substrates. The PVAc gives dielectric constant values in the range of 3.2-8.3, which can be adopted as a good gate insulator for OTFTs. The fabricating condition of OTFTs using the PVAc was improved by both adjusting its viscosity with that of a medium, and controlling the surface morphology and spin coating conditions. All these meet the requirement for a new organic gate-insulator, which can improve the performance of the present OTFTs. (c) 2006 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | PENTACENE | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | RHEOLOGY | - |
dc.subject | MOBILITY | - |
dc.title | Characteristics of poly(vinyl acetate) as a gate insulating material in organic thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, J. S. | - |
dc.identifier.doi | 10.1016/j.synthmet.2006.05.009 | - |
dc.identifier.scopusid | 2-s2.0-33746307506 | - |
dc.identifier.wosid | 000239872600019 | - |
dc.identifier.bibliographicCitation | SYNTHETIC METALS, v.156, no.11-13, pp.861 - 864 | - |
dc.relation.isPartOf | SYNTHETIC METALS | - |
dc.citation.title | SYNTHETIC METALS | - |
dc.citation.volume | 156 | - |
dc.citation.number | 11-13 | - |
dc.citation.startPage | 861 | - |
dc.citation.endPage | 864 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalResearchArea | Polymer Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalWebOfScienceCategory | Polymer Science | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | RHEOLOGY | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | organic thin film transistor | - |
dc.subject.keywordAuthor | poly(vinyl acetate) | - |
dc.subject.keywordAuthor | dielectric constant | - |
dc.subject.keywordAuthor | OTFF | - |
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