A new top gate pentacene organic thin film transistor employing vapor deposited polyimide as a gate dielectric
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, C.W. | - |
dc.contributor.author | Park, S.-G. | - |
dc.contributor.author | Kim, C.-Y. | - |
dc.contributor.author | Han, M.-K. | - |
dc.contributor.author | Hyung, G.-W. | - |
dc.contributor.author | Lee, D.-H. | - |
dc.contributor.author | Pyo, S.-W. | - |
dc.contributor.author | Kim, Y.K. | - |
dc.date.accessioned | 2022-02-07T07:42:20Z | - |
dc.date.available | 2022-02-07T07:42:20Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25034 | - |
dc.description.abstract | A top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm 2/Vs as a mobility, about 103 as an on-off ratio (I on/off), -7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope. © 2006 Materials Research Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Materials Research Society | - |
dc.title | A new top gate pentacene organic thin film transistor employing vapor deposited polyimide as a gate dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Y.K. | - |
dc.identifier.doi | 10.1557/proc-0937-m10-51 | - |
dc.identifier.scopusid | 2-s2.0-33947680332 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.937, pp.137 - 142 | - |
dc.relation.isPartOf | Materials Research Society Symposium Proceedings | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 937 | - |
dc.citation.startPage | 137 | - |
dc.citation.endPage | 142 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
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