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Effects of SAMs treatment by ALD on the performance of organic thin film transistors

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dc.contributor.authorKim, H.-
dc.contributor.authorPark, J.-
dc.contributor.authorBong, K.-W.-
dc.contributor.authorKang, J.-M.-
dc.contributor.authorKim, H.-M.-
dc.contributor.authorChoi, J.-S.-
dc.date.accessioned2022-02-07T07:43:18Z-
dc.date.available2022-02-07T07:43:18Z-
dc.date.created2022-02-07-
dc.date.issued2006-
dc.identifier.issn1083-1312-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25086-
dc.description.abstractThe characteristics of OTFTs have been improved by using SAMs that were formed by atomic layer deposition which is an ultra-thin film deposition technique. SAMs make pentacene be deposited in the upright order on the gate insulator. The operational characteristic improvements of the OTFTs with the SAM will be discussed. © 2006 SID.-
dc.language영어-
dc.language.isoen-
dc.titleEffects of SAMs treatment by ALD on the performance of organic thin film transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorChoi, J.-S.-
dc.identifier.scopusid2-s2.0-34748851949-
dc.identifier.bibliographicCitationSID Conference Record of the International Display Research Conference, pp.326 - 328-
dc.relation.isPartOfSID Conference Record of the International Display Research Conference-
dc.citation.titleSID Conference Record of the International Display Research Conference-
dc.citation.startPage326-
dc.citation.endPage328-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorALD-
dc.subject.keywordAuthorOTFTs-
dc.subject.keywordAuthorPentacene-
dc.subject.keywordAuthorPVP-
dc.subject.keywordAuthorSAMs-
dc.subject.keywordAuthorSurface treatment-
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