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P-41: Characteristic enhancement in saturation behavior of organic thin-film transistors by using the synthesized photo-reactive polymeric gate insulator

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dc.contributor.authorBong, K.W.-
dc.contributor.authorPark, J.-
dc.contributor.authorKim, H.-
dc.contributor.authorKang, J.M.-
dc.contributor.authorKinf, H.M.-
dc.contributor.authorYi, M.H.-
dc.contributor.authorChoi, J.S.-
dc.date.accessioned2022-02-07T07:43:20Z-
dc.date.available2022-02-07T07:43:20Z-
dc.date.created2022-02-07-
dc.date.issued2006-
dc.identifier.issn1083-1312-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25087-
dc.description.abstractIn this study, it is reported that the saturation characteristics of OTFTs can be improved by substituting PVP with photo-reactive functional group, which was prepared by substituting hydroxyl group in PVP with cinnamoyl group. The synthesis details and the effects of the modified PVP on the device performance are discussed. © 2006 SID.-
dc.language영어-
dc.language.isoen-
dc.titleP-41: Characteristic enhancement in saturation behavior of organic thin-film transistors by using the synthesized photo-reactive polymeric gate insulator-
dc.typeArticle-
dc.contributor.affiliatedAuthorChoi, J.S.-
dc.identifier.scopusid2-s2.0-34748863604-
dc.identifier.bibliographicCitationSID Conference Record of the International Display Research Conference, pp.369 - 371-
dc.relation.isPartOfSID Conference Record of the International Display Research Conference-
dc.citation.titleSID Conference Record of the International Display Research Conference-
dc.citation.startPage369-
dc.citation.endPage371-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorOrganic thin film transistors-
dc.subject.keywordAuthorPentacene-
dc.subject.keywordAuthorPhotoalign-
dc.subject.keywordAuthorPVP-
dc.subject.keywordAuthorSurface treatment-
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