Low-voltage operating of organic thin-film transistors by using polystyrene/TiO2 composite film formed by sol-gel process

Abstract

In this study, a composite layer composed of polystyrene and TiO 2 was prepared by sol-gel process using TTIP as a precursor and was utilized as a gate insulator of OTFTs. The composite insulator provides the lower threshold voltage and the enhanced sub threshold slope of OTFTs mainly due to its higher dielectric constant than that of the bare polystyrene. Consequently, it is demonstrated that the sol-gel process can open an interesting direction for the fabrication of highperformance OTFTs, and contribute for OTFTs to be feasible for real applications. © 2006 SID.