Study on the characteristics of metal-organic interface for organic thin-film transistors

Abstract

In this study, the interfacial characteristics between pentacene and Au layers were investigated with varying of the deposition rate of Au layer from 1.0 to 15.0 angstrom/s. For the devices with the structure of bottorn-Au/pentacene/top-Au, it was observed that the electrical characteristics could be improved by increasing the deposition rate of top-Au, and the highest electrical conductivity value, 1.5 x 10(-6) S/cm, was obtained for the device with the top-Au-deposited at 15.0 angstrom/s. AES results showed that the integrated atomic content of Au in top-Au layer is substantially increased with the deposition rate of top-Au, but there was no critical difference in the depth profile of An atoms regardless of the deposition rate of top-Au. And also, we fabricated pentacene-based Schottky diodes and measured the hole injection barrier heights from Au electrode into pentacene layer using Fowler-Nordheim theory. Upon the investigations, it was observed that the hole injection barrier was reduced with increasing the deposition rate of Au electrode and the lowest value of 0.12 eV was obtained for the device with the Au electrode deposited at 15.0 angstrom/s. As a result, the performance of top-contact OTFT could be improved with increasing the deposition rate of Au electrodes (source and drain). (C) 2005 Elsevier B.V. All rights reserved.