External force field-induced crystallization of amorphous materials: A molecular dynamics study
DC Field | Value | Language |
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dc.contributor.author | Park, S | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Lee, JS | - |
dc.contributor.author | Choi, YK | - |
dc.date.accessioned | 2022-02-17T03:41:27Z | - |
dc.date.available | 2022-02-17T03:41:27Z | - |
dc.date.created | 2022-02-17 | - |
dc.date.issued | 2005-10 | - |
dc.identifier.issn | 1089-3954 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25148 | - |
dc.description.abstract | This is the first investigation on the possibility of the isothermal crystallization induced by an external force field using molecular dynamics simulation. External cyclic forces with a DC bias are superimposed on the intermolecular forces, which govern the global behavior of molecules. It is discovered that field-enhanced movements of susceptor molecules can induce crystallization effectively without heating problem, the crystallization process becomes more efficient when the external cyclic force is shifted by a DC bias, a radial distribution function is a sufficient tool to observe the progress of the crystallization, and the optimal values for the external forces are close to the averaged intermolecular forces. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS INC | - |
dc.subject | LENNARD-JONES SYSTEM | - |
dc.subject | CRYSTAL NUCLEATION | - |
dc.subject | SILICON | - |
dc.subject | AMORPHIZATION | - |
dc.subject | SIMULATION | - |
dc.subject | INTERFACE | - |
dc.title | External force field-induced crystallization of amorphous materials: A molecular dynamics study | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, S | - |
dc.contributor.affiliatedAuthor | Kim, HJ | - |
dc.identifier.doi | 10.1080/10893950500357764 | - |
dc.identifier.scopusid | 2-s2.0-29044436613 | - |
dc.identifier.wosid | 000234653900001 | - |
dc.identifier.bibliographicCitation | MICROSCALE THERMOPHYSICAL ENGINEERING, v.9, no.4, pp.317 - 329 | - |
dc.relation.isPartOf | MICROSCALE THERMOPHYSICAL ENGINEERING | - |
dc.citation.title | MICROSCALE THERMOPHYSICAL ENGINEERING | - |
dc.citation.volume | 9 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 317 | - |
dc.citation.endPage | 329 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Thermodynamics | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Thermodynamics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Mechanical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Characterization & Testing | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LENNARD-JONES SYSTEM | - |
dc.subject.keywordPlus | CRYSTAL NUCLEATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | AMORPHIZATION | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordAuthor | external force field | - |
dc.subject.keywordAuthor | crystallization | - |
dc.subject.keywordAuthor | amorphous | - |
dc.subject.keywordAuthor | MD simulation | - |
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