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A defect-tolerant memory architecture for molecular electronics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, MH | - |
| dc.contributor.author | Kim, YK | - |
| dc.contributor.author | Choi, YH | - |
| dc.date.accessioned | 2022-02-18T07:42:13Z | - |
| dc.date.available | 2022-02-18T07:42:13Z | - |
| dc.date.created | 2022-02-18 | - |
| dc.date.issued | 2004-03 | - |
| dc.identifier.issn | 1536-125X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25790 | - |
| dc.description.abstract | This paper presents a defect-tolerant memory architecture for molecular electronics. A crossbar structure, where molecules are sandwiched between nanowires, is used as a model to realize molecular memory and to achieve defect tolerance. Defects in the logic circuits for addressing memory are also taken into account. The number of spare rows and columns to form a functioning memory is estimated by computer simulation for various values of defect rate and memory size. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | A defect-tolerant memory architecture for molecular electronics | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, YK | - |
| dc.contributor.affiliatedAuthor | Choi, YH | - |
| dc.identifier.doi | 10.1109/TNANO.2004.824011 | - |
| dc.identifier.scopusid | 2-s2.0-2342562592 | - |
| dc.identifier.wosid | 000220457800025 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.3, no.1, pp.152 - 157 | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
| dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
| dc.citation.volume | 3 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 152 | - |
| dc.citation.endPage | 157 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | crossbar | - |
| dc.subject.keywordAuthor | defect tolerance | - |
| dc.subject.keywordAuthor | memory | - |
| dc.subject.keywordAuthor | molecular electronics | - |
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Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)