Characteristics of pentacene-based thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Park, JH | - |
dc.contributor.author | Kang, CH | - |
dc.contributor.author | Kim, YJ | - |
dc.contributor.author | Lee, YS | - |
dc.contributor.author | Choi, JS | - |
dc.date.accessioned | 2022-02-18T07:42:33Z | - |
dc.date.available | 2022-02-18T07:42:33Z | - |
dc.date.created | 2022-02-18 | - |
dc.date.issued | 2004-01-05 | - |
dc.identifier.issn | 0928-4931 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/25806 | - |
dc.description.abstract | Pentacene was used as an active layer of organic thin-film transistors (TFTs) by depositing with the vacuum thermal evaporation. It is revealed that the deposition rate of pentacene may have critical effects on the electrical properties of pentacene-based TFTs. For the device fabrication, pentacene layers were deposited at a rate of 0.5, 1.0 and 2.5 Angstrom/s. Upon the investigations, TFT with the pentacene layer deposited at a rate of 2.5 Angstrom/s showed the most superior properties. The field-effect mobility of 0.16 cm(2)/V s, and the on/off current ratio of 10(5) were obtained at a drain voltage of -30 V To study the correlation between the deposition rate and the device performance, the capacitance properties were also measured in the metal/insulator/organic semiconductor (MIS) structure device by employing the capacitance-voltage (C-V) measurements. The lowest capacitance value was observed in the device with the pentacene layer deposited at a rate of 2.5 Angstrom/s. (C) 2003 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | TEMPERATURE | - |
dc.subject | TRANSPORT | - |
dc.subject | MOBILITY | - |
dc.title | Characteristics of pentacene-based thin-film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, JS | - |
dc.identifier.doi | 10.1016/j.msec.2003.09.064 | - |
dc.identifier.scopusid | 2-s2.0-0346846681 | - |
dc.identifier.wosid | 000187969700007 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, v.24, no.1-2, pp.27 - 29 | - |
dc.relation.isPartOf | MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | - |
dc.citation.title | MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | - |
dc.citation.volume | 24 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 27 | - |
dc.citation.endPage | 29 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | pentacene | - |
dc.subject.keywordAuthor | organic TFTs | - |
dc.subject.keywordAuthor | capacitance-voltage | - |
dc.subject.keywordAuthor | MIS | - |
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