Wafer bonding induced crystallization of a-Si following excimer laser irradiation

Abstract

We propose a novel method to fabricate ordered-structure crystalline Si films by using conventional wafer bonding technology followed by XeCl excimer laser irradiation. After hydrophobic initial bonding between the a-Si on the glass substrate and the prime wafer (100), the laser beam was irradiated through the glass substrate. The epitaxial growth from the Si wafer (100) of a melted a-Si was investigated through Field Emission Scanning Electron Microscopy (FESEM) analyses. Since hydrophobic initial bonding was performed at room temperature, the surface energy of the bonded interface was low, which made the prime Si wafer recycleable.