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실리콘 돌기의 응착마찰 분자동력학 시뮬레이션Molecular Dynamics Simulation of Adhesive Friction of Silicon Asperity
- Other Titles
- Molecular Dynamics Simulation of Adhesive Friction of Silicon Asperity
- Issue Date
- 2004
- Publisher
- 대한기계학회
- Keywords
- Adhesion(응착); Friction(마찰); Wear(마멸); Asperity(돌기); Molecular Dynamics(분자동력학); Tersoff Potential(터소프 포텐셜); Silicon(실리콘); Adhesion(응착); Friction(마찰); Wear(마멸); Asperity(돌기); Molecular Dynamics(분자동력학); Tersoff Potential(터소프 포텐셜); Silicon(실리콘)
- Citation
- 대한기계학회논문집 A, v.28, no.5, pp.547 - 553
- Journal Title
- 대한기계학회논문집 A
- Volume
- 28
- Number
- 5
- Start Page
- 547
- End Page
- 553
- ISSN
- 1226-4873
- Abstract
- A hemispherical asperity moving over a flat plane is simulated based on classical molecular dynamics. The asperity and the plane consist of silicon atoms whose interactions are governed by the Tersoff three-body potential. The gap between the asperity and the plane is maintained to produce attractive normal force in order to investigate the adhesive friction and wear. The simulation focuses on the influence of crystallographic orientation of the contacting surfaces and the moving direction. It is demonstrated that the adhesive friction and wear are lower when crystallographic orientations of the contacting surfaces are different, and also depend on the moving direction relative to the crystallographic orientation.
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Related Researcher
- Cho, Sung San
- Engineering (Mechanical & System Design Engineering)