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Trench isolation step-induced (TRISI) narrow width effect on MOSFET (vol 23, pg 600, 2002)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Y | - |
| dc.contributor.author | Sridhar, S | - |
| dc.contributor.author | Chatterjee, A | - |
| dc.date.accessioned | 2022-04-11T02:41:48Z | - |
| dc.date.available | 2022-04-11T02:41:48Z | - |
| dc.date.created | 2022-04-11 | - |
| dc.date.issued | 2002-11 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/26792 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Trench isolation step-induced (TRISI) narrow width effect on MOSFET (vol 23, pg 600, 2002) | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Y | - |
| dc.identifier.doi | 10.1109/LED.2002.806972 | - |
| dc.identifier.wosid | 000179647200015 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.23, no.11, pp.676 - 676 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 23 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 676 | - |
| dc.citation.endPage | 676 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Correction | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
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Related Researcher
- Kim, Young min
- Engineering (Electronic & Electrical Engineering)