Defect interaction by dual MeV ion implantation in silicon
DC Field | Value | Language |
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dc.contributor.author | Ro, JS | - |
dc.contributor.author | Cho, NH | - |
dc.date.accessioned | 2022-04-11T02:42:50Z | - |
dc.date.available | 2022-04-11T02:42:50Z | - |
dc.date.created | 2022-04-11 | - |
dc.date.issued | 2002-02 | - |
dc.identifier.issn | 0168-583X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/26849 | - |
dc.description.abstract | In this study we conducted experiments to reveal the interactions between different types of ion-induced defects upon annealing in MeV (phosphorous + carbon) implanted silicon. We intentionally tried to overlap the interstitial-rich zone induced by P implantation with the vacancy-rich zone induced by C implantation. Double crystal X-ray diffraction (DCXRD) rocking curve analyses for the samples annealed at 550 degreesC indicated that a positive strain built up at similar to2.3 mum by a single 3 MeV P+ implantation was effectively reduced by similar to50% using dual implantation (3 MeV P- + 3 MeV C+), However, the amount of strain relaxation in the C implanted layer does not decrease upon annealing. (C) 2002 Elsevier Science B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Defect interaction by dual MeV ion implantation in silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, JS | - |
dc.identifier.doi | 10.1016/S0168-583X(01)00938-7 | - |
dc.identifier.wosid | 000173580500008 | - |
dc.identifier.bibliographicCitation | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.187, no.2, pp.215 - 219 | - |
dc.relation.isPartOf | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | - |
dc.citation.title | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | - |
dc.citation.volume | 187 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 215 | - |
dc.citation.endPage | 219 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.relation.journalWebOfScienceCategory | Physics, Nuclear | - |
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