Photoacryl을 게이트 절연층으로 사용한 유기 박막트랜지스터의 전기적 특성에 관한 연구
DC Field | Value | Language |
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dc.contributor.author | 김윤명 | - |
dc.contributor.author | 표상우 | - |
dc.contributor.author | 김준호 | - |
dc.contributor.author | 심재훈 | - |
dc.contributor.author | 김영관 | - |
dc.contributor.author | 김정수 | - |
dc.date.accessioned | 2022-04-11T03:41:07Z | - |
dc.date.available | 2022-04-11T03:41:07Z | - |
dc.date.created | 2022-04-11 | - |
dc.date.issued | 2002 | - |
dc.identifier.issn | 1226-7945 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27108 | - |
dc.description.abstract | Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039 ~ 0.17 cm2/Vs, on-off current ratio is 106, and threshold voltage is -7 V. And here we report the study of driving green emitting, Ir(ppy)3, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ppy)3 doped in BCP/BCP/Alq3/Li:Al/Al and OTFT with a structure of inverted-staggered Al(gate electrode)/photoacryl(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITO patterend glass substrate. The electrical characteristics are turn-on voltage of -10 V, and maximum luminance of about 90 cd/m2. Device characteristics were quite different with that of only OELD. | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | Photoacryl을 게이트 절연층으로 사용한 유기 박막트랜지스터의 전기적 특성에 관한 연구 | - |
dc.title.alternative | A Study on the Electrical Characteristics of Organic Thin Film Transistor using Photoacryl as Gate Dielectric Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 심재훈 | - |
dc.contributor.affiliatedAuthor | 김영관 | - |
dc.contributor.affiliatedAuthor | 김정수 | - |
dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.15, no.2 | - |
dc.relation.isPartOf | 전기전자재료학회논문지 | - |
dc.citation.title | 전기전자재료학회논문지 | - |
dc.citation.volume | 15 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.identifier.kciid | ART000893002 | - |
dc.description.journalClass | 2 | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Electroluminescent | - |
dc.subject.keywordAuthor | Phosphorescent | - |
dc.subject.keywordAuthor | Active matrix | - |
dc.subject.keywordAuthor | Passive matrix | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Electroluminescent | - |
dc.subject.keywordAuthor | Phosphorescent | - |
dc.subject.keywordAuthor | Active matrix | - |
dc.subject.keywordAuthor | Passive matrix | - |
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