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Photoacryl을 게이트 절연층으로 사용한 유기 박막트랜지스터의 전기적 특성에 관한 연구

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dc.contributor.author김윤명-
dc.contributor.author표상우-
dc.contributor.author김준호-
dc.contributor.author심재훈-
dc.contributor.author김영관-
dc.contributor.author김정수-
dc.date.accessioned2022-04-11T03:41:07Z-
dc.date.available2022-04-11T03:41:07Z-
dc.date.created2022-04-11-
dc.date.issued2002-
dc.identifier.issn1226-7945-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27108-
dc.description.abstractOrganic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039 ~ 0.17 cm2/Vs, on-off current ratio is 106, and threshold voltage is -7 V. And here we report the study of driving green emitting, Ir(ppy)3, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ppy)3 doped in BCP/BCP/Alq3/Li:Al/Al and OTFT with a structure of inverted-staggered Al(gate electrode)/photoacryl(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITO patterend glass substrate. The electrical characteristics are turn-on voltage of -10 V, and maximum luminance of about 90 cd/m2. Device characteristics were quite different with that of only OELD.-
dc.publisher한국전기전자재료학회-
dc.titlePhotoacryl을 게이트 절연층으로 사용한 유기 박막트랜지스터의 전기적 특성에 관한 연구-
dc.title.alternativeA Study on the Electrical Characteristics of Organic Thin Film Transistor using Photoacryl as Gate Dielectric Layer-
dc.typeArticle-
dc.contributor.affiliatedAuthor심재훈-
dc.contributor.affiliatedAuthor김영관-
dc.contributor.affiliatedAuthor김정수-
dc.identifier.bibliographicCitation전기전자재료학회논문지, v.15, no.2-
dc.relation.isPartOf전기전자재료학회논문지-
dc.citation.title전기전자재료학회논문지-
dc.citation.volume15-
dc.citation.number2-
dc.type.rimsART-
dc.identifier.kciidART000893002-
dc.description.journalClass2-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorThin film transistor-
dc.subject.keywordAuthorElectroluminescent-
dc.subject.keywordAuthorPhosphorescent-
dc.subject.keywordAuthorActive matrix-
dc.subject.keywordAuthorPassive matrix-
dc.subject.keywordAuthorThin film transistor-
dc.subject.keywordAuthorElectroluminescent-
dc.subject.keywordAuthorPhosphorescent-
dc.subject.keywordAuthorActive matrix-
dc.subject.keywordAuthorPassive matrix-
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