Thickness dependence of the ferroelectric characteristics of SBT and SBTN thin films

Abstract

SrBi(2.4)Ta(2)O(9) (SBT) and SrBi(2.4)(Ta(0.75)Nb(0.25))O(9) (SBTN) thin films were prepared using LSMCD and MOD processes, respectively, and their ferroelectric properties were characterized with variation of the film thickness. The LSMCD-derived SET film of 70 nm thickness exhibited the 2P(r) of 15.9 muC/cm(2) and E(c) of 69 kV/cm at +/-5 V. Within the thickness range of 70 similar to 410 nm. the SET and SBTN films exhibited the size effects, i.e.. a decrease of the remanent polarization and the relative permittivity and an increase of the coercive field with a reduction of the film thickness. The SET and SBTN films of 70 similar to 410 nm thickness exhibited the fatigue-free behavior up to 10(12) switching cycles.