Self-propagating high-temperature synthesis of aluminum nitride under lower nitrogen pressures
- Authors
- Shin, J; Ahn, DH; Shin, MS; Kim, YS
- Issue Date
- May-2000
- Publisher
- WILEY-BLACKWELL
- Citation
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.83, no.5, pp.1021 - 1028
- Journal Title
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY
- Volume
- 83
- Number
- 5
- Start Page
- 1021
- End Page
- 1028
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27364
- ISSN
- 0002-7820
- Abstract
- The synthesis of aluminum nitride (AlN) via self-propagating high-temperature synthesis (SHS) was attempted, using aluminum powder that was mixed with AlN powder as a diluent. The AlN content in the reactant was varied over a range of 30%-70%, and the nitrogen pressure was varied over a range of 0.1-1.0 MPa. The SHS reaction that was performed using a reactant that contained 50% AlN diluent, under a nitrogen-gas pressure of 0.8 MPa, yielded the highest conversion ratio of aluminum powder to AlN powder. A mechanism for the reaction of aluminum with nitrogen gas during the SHS process was discussed, based on observations of the microstructures of the reaction zone and products.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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