Electrical characteristics of the MOD-derived SrBi2xTa2O9 and SrBi2.4(Ta,Nb)(2)O-9 thin films
DC Field | Value | Language |
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dc.contributor.author | Yeon, DJ | - |
dc.contributor.author | Park, JD | - |
dc.contributor.author | Kwon, Y | - |
dc.contributor.author | Oh, TS | - |
dc.date.accessioned | 2022-04-14T05:41:38Z | - |
dc.date.available | 2022-04-14T05:41:38Z | - |
dc.date.created | 2022-04-14 | - |
dc.date.issued | 2000-05 | - |
dc.identifier.issn | 0022-2461 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27366 | - |
dc.description.abstract | Ferroelectric and leakage current characteristics of the MOD-derived SrBi2xTa2O9 (0.8 less than or equal to x less than or equal to 1.6) and SrBi2.4(Ta1-yNby) O-2(9) (0 less than or equal to y less than or equal to 1) thin films were investigated. The SBT and SBTN films were fully crystallized to Bi-layered perovskite structure by annealing at 800 degrees C for 1 hour in oxygen atmosphere. The ferroelectric characteristics of the SBT films were optimized at the Bi/Ta mole ratio x of 1.2. The leakage current density of the Bi-excess SBT films decreased remarkably by the post-metallization annealing at 800 degrees C for 10 minutes in oxygen ambient. The ferroelectric characteristics of the SBTN films were optimized with the SBN content y of 0.25. The SrBi2.4(Ta0.75Nb0.25) O-2(9) film exhibited 2P(r) and E-c of 19.04 mu C/cm(2) and 24.94 kV/cm at +/- 5 V, which were superior to 2P(r) of 11.3 mu C/cm(2) and E-c of 39.6 kV/cm obtained for the SrBi2.4Ta2O9 film after the post-metallization annealing. The MOD-derived SrBi2.4(Ta0.75Nb0.25)(2)O-9 film did not exhibit the polarization fatigue after 10(11) switching cycles at +/- 5 V. (C) 2000 Kluwer Academic Publishers. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | BISMUTH | - |
dc.subject | BI | - |
dc.title | Electrical characteristics of the MOD-derived SrBi2xTa2O9 and SrBi2.4(Ta,Nb)(2)O-9 thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, TS | - |
dc.identifier.doi | 10.1023/A:1004792929465 | - |
dc.identifier.wosid | 000085957300004 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE, v.35, no.10, pp.2405 - 2411 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS SCIENCE | - |
dc.citation.title | JOURNAL OF MATERIALS SCIENCE | - |
dc.citation.volume | 35 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2405 | - |
dc.citation.endPage | 2411 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | BISMUTH | - |
dc.subject.keywordPlus | BI | - |
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