Microstructure and electrical properties of layered perovskite SrBi2xTa2O9 thin films prepared by sol-gel process

Abstract

Ferroelectric thin films of SrBi2xTa2O9 were prepared an platinized silicon substrates by sol-gel process. Effects of bismuth content on the formation of layered perovskite structure and ferroelectric properties of thin films were investigated. With increasing bismuth content x, SrBi2xTa2O9 thin films exhibited more preferential orientation along the c-axis. Remanent polarization of SrBi2xTa2O9 thin films were dependent on the film composition. SrBi2.4Ta2O9 films showed the optimum ferroelectric characteristics: 2P(r) of 5.5 mu C/cm(2) and E-c of 15 kV/cm. Polarization fatigue of SrBi2.4Ta2O9 thin film at applied voltage of +/-5 V was less than 15% after 10(11) cycles of polarization reversal.