Annealing behavior of a doubly MeV implanted silicon
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, NH | - |
dc.contributor.author | Huh, TH | - |
dc.contributor.author | Jang, YT | - |
dc.contributor.author | Ro, JS | - |
dc.contributor.author | Oh, JG | - |
dc.contributor.author | Lee, KH | - |
dc.contributor.author | Cho, BJ | - |
dc.contributor.author | Kim, JC | - |
dc.date.accessioned | 2022-05-18T06:42:25Z | - |
dc.date.available | 2022-05-18T06:42:25Z | - |
dc.date.created | 2022-05-18 | - |
dc.date.issued | 1997 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27668 | - |
dc.description.abstract | MeV ion implantation has gained much attention in the field of CMOS retrograde well engineering. Damage formation by high energy implantation has significant characteristics in that the lattice damage is concentrated near R-P and isolated from the surface. Si self interstitials are thought to be responsible for the formation of secondary defects upon annealing. The region of excess interstitials could be generated near R-P by two effects combined with Frenkel separation and dopant activation. However, at the same time, the small amount of vacancy rich zone may exist ahead of an interstitial rich zone. Ln this study we conducted model experiments to reveal the interactions between different types of defects upon annealing in ii doubly MeV implanted silicon using ion species of P and C. The morphology of secondary defects induced by P implantation in a doubly implanted sample was observed to be different from that in singly P implanted one. Meanwhile, no extended defects were observed in the C implanted layer. DCXRD rocking curve analyses for the sample annealed at 550 degrees C indicated that a positive strain built up at similar to 2.3 mu m by P implantation was effectively reduced by similar to 50 % using additional carbon implantation. However, the amount of strain relaxation in the C implanted layer does not decrease upon annealing at 1000 degrees C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Annealing behavior of a doubly MeV implanted silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ro, JS | - |
dc.identifier.wosid | A1997BH58Z00171 | - |
dc.identifier.bibliographicCitation | ION IMPLANTATION TECHNOLOGY - 96, pp.661 - 664 | - |
dc.relation.isPartOf | ION IMPLANTATION TECHNOLOGY - 96 | - |
dc.citation.title | ION IMPLANTATION TECHNOLOGY - 96 | - |
dc.citation.startPage | 661 | - |
dc.citation.endPage | 664 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 3 | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.