Theoretical and experimental investigation of disordering effects on photoluminescence spectra of InGaAs/InGaAsP quantum wells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yi, JC | - |
dc.contributor.author | Choi, WJ | - |
dc.contributor.author | Lee, S | - |
dc.contributor.author | Woo, DH | - |
dc.contributor.author | Kim, SH | - |
dc.date.accessioned | 2022-05-23T07:46:55Z | - |
dc.date.available | 2022-05-23T07:46:55Z | - |
dc.date.created | 2022-05-23 | - |
dc.date.issued | 2000 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27955 | - |
dc.description.abstract | The effect of disordering on photoluminescence spectra of InGaAs/InGaAsP quantum wells has been investigated experimentally and theoretically taking into account the valence band intermixing, strain, exciton effects, and the non-identical diffusion constants for group III and V materials. The disordering profile of 1.55Q InGaAs/InGaAsP quantum wells lattice matched to InP has been controlled by choice of the cap layer materials as well as the diffusion time and diffusion temperature. By comparing the experimental data and theoretical calculations, the diffusion constant for each material has been extracted. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MATERIALS RESEARCH SOC | - |
dc.subject | FREE VACANCY DIFFUSION | - |
dc.subject | INTERDIFFUSION | - |
dc.title | Theoretical and experimental investigation of disordering effects on photoluminescence spectra of InGaAs/InGaAsP quantum wells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yi, JC | - |
dc.identifier.wosid | 000089140500074 | - |
dc.identifier.bibliographicCitation | INFRARED APPLICATIONS OF SEMICONDUCTORS III, v.607, pp.519 - 524 | - |
dc.relation.isPartOf | INFRARED APPLICATIONS OF SEMICONDUCTORS III | - |
dc.citation.title | INFRARED APPLICATIONS OF SEMICONDUCTORS III | - |
dc.citation.volume | 607 | - |
dc.citation.startPage | 519 | - |
dc.citation.endPage | 524 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FREE VACANCY DIFFUSION | - |
dc.subject.keywordPlus | INTERDIFFUSION | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.