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Shear strength and aging characteristics of Sn-Pb and Sn-Ag-Bi solder bumps

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dc.contributor.authorChoi, JW-
dc.contributor.authorOh, TS-
dc.date.accessioned2022-05-23T08:50:03Z-
dc.date.available2022-05-23T08:50:03Z-
dc.date.created2022-05-23-
dc.date.issued2001-
dc.identifier.urihttps://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/28021-
dc.description.abstractBall shear strength and aging charcteristics of the 63Sn-37Pb solder bumps were characterized with variations of UBM finish (Au/Ni/Cu and Ni/Cu) and solder ball size (0.35 to 0.76 mm). Also, tensile strength, ball shear strength, and aging characteristics of the Sn-3.5Ag-Bi solder alloys were investigated. When formed on Au/Ni/Cu UBM, ball shear strength of the 63Sn-37Pb solder bumps of 0.35 mm size was higher than those of the 0.62 and 0.76 mm sizes due to precipication hardening of Au-Sn intermetallic compounds. When the bump size was identical, the 63Sn-37Pb solder bumps exhibited higher shear strength on Au/Ni/Cu UBM than on Ni/Cu UBM. Shear strength of the 63Sn-37Pb solder bumps formed on Ni/Cu UBM was little varied with aging at 150degreesC up to 1000 hours. With increasing the aging time, the failure mode of the 63Sn-37Pb solder bumps on Au/Ni/Cu UBM was changed from ductile fracture (solder failure) to brittle fracture (interface failure). The 63Sn-37Pb solder bumps on Ni/Cu UBM showed ductile fracture regardless of the aging time up to 1000 hours. Tensile strength of the Sn-3.5Ag-Bi alloys increased with increasing the Bi content up to 9 wt%. Ball shear strength of the Sn-3.5Ag-Bi solder bumps increased with increasing the Bi content and reached maximum at 5-7 wt% Bi. Shear strength of the Sn-3.5Ag-5Bi solder bumps increased substatially from 70 MPa to 84 MPa by aging at 150degreesC for 300 hours.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-
dc.subjectMETALLIZATION-
dc.subjectFATIGUE-
dc.subjectJOINTS-
dc.titleShear strength and aging characteristics of Sn-Pb and Sn-Ag-Bi solder bumps-
dc.typeArticle-
dc.contributor.affiliatedAuthorOh, TS-
dc.identifier.doi10.1109/EMAP.2001.984023-
dc.identifier.wosid000175586500077-
dc.identifier.bibliographicCitationADVANCES IN ELECTRONIC MATERIALS AND PACKAGING 2001, pp.433 - 437-
dc.relation.isPartOfADVANCES IN ELECTRONIC MATERIALS AND PACKAGING 2001-
dc.citation.titleADVANCES IN ELECTRONIC MATERIALS AND PACKAGING 2001-
dc.citation.startPage433-
dc.citation.endPage437-
dc.type.rimsART-
dc.type.docTypeProceedings Paper-
dc.description.journalClass3-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Manufacturing-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusMETALLIZATION-
dc.subject.keywordPlusFATIGUE-
dc.subject.keywordPlusJOINTS-
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