Interfacial energy band bending and carrier trapping at the vacuum-deposited MAPbI(3) perovskite/gate dielectric interface
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Yujin | - |
dc.contributor.author | Park, Byoungnam | - |
dc.date.available | 2020-07-10T04:14:47Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 2211-3797 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/2865 | - |
dc.description.abstract | We report energy band bending of methylammonium lead halide (MAPbI(3)) perovskite film in contact with indium-tin-oxide (ITO) surface using photoelectron spectroscopy in air (PESA) and ultraviolet photoelectron spectroscopy (UPS) measurements. MAPbI3 perovskite films were vacuum-deposited using co-evaporation of methylammonium iodide (CH3NH3I, MAI) and lead iodide (PbI2) powders. Using PESA and UPS, the highest occupied molecular orbital levels were measured varying the thickness of the perovskite films. Substantial energy band bending close to the ITO surface was not observed. The vacuum-deposited perovskite films feature ambipolar carrier transport from field effect current measurements. Particularly, the threshold voltage for electron conduction was -20 and 25 V for the forward and reverse gate scans, exhibiting significant current hysteresis. The magnitude of the threshold voltage, far away from zero gate voltage, implies that interface trapping rather than energy band bending dominate the threshold voltage. In other words, perovskite/gate dielectric interface trap states for electrons modulate the magnitude of the threshold voltage. Our work provides insights into the origin of gate voltage dependent threshold voltage in perovskite FETs minimizing the contribution from ion migration based on the observation of ambipolar carrier transport at room temperature for vacuum deposited perovskite films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | HYBRID SOLAR-CELLS | - |
dc.subject | HALIDE PEROVSKITE | - |
dc.subject | HYSTERESIS | - |
dc.subject | SIZE | - |
dc.title | Interfacial energy band bending and carrier trapping at the vacuum-deposited MAPbI(3) perovskite/gate dielectric interface | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Byoungnam | - |
dc.identifier.doi | 10.1016/j.rinp.2018.08.043 | - |
dc.identifier.scopusid | 2-s2.0-85053515685 | - |
dc.identifier.wosid | 000454026000045 | - |
dc.identifier.bibliographicCitation | RESULTS IN PHYSICS, v.11, pp.302 - 305 | - |
dc.relation.isPartOf | RESULTS IN PHYSICS | - |
dc.citation.title | RESULTS IN PHYSICS | - |
dc.citation.volume | 11 | - |
dc.citation.startPage | 302 | - |
dc.citation.endPage | 305 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | HYBRID SOLAR-CELLS | - |
dc.subject.keywordPlus | HALIDE PEROVSKITE | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | SIZE | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.