Uniform poly-Si TFTs for AMOLEDs using field-enhanced rapid thermal annealing.
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Sung-Ryong | - |
dc.contributor.author | Nam, Seung-Eui | - |
dc.contributor.author | Kim, Hyoung-June | - |
dc.date.accessioned | 2022-07-05T08:43:42Z | - |
dc.date.available | 2022-07-05T08:43:42Z | - |
dc.date.created | 2022-07-05 | - |
dc.date.issued | 2007 | - |
dc.identifier.issn | 1012-0394 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/29979 | - |
dc.description.abstract | Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TRANS TECH PUBLICATIONS LTD | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | CRYSTALLIZATION | - |
dc.subject | FILMS | - |
dc.title | Uniform poly-Si TFTs for AMOLEDs using field-enhanced rapid thermal annealing. | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nam, Seung-Eui | - |
dc.contributor.affiliatedAuthor | Kim, Hyoung-June | - |
dc.identifier.wosid | 000245890100111 | - |
dc.identifier.bibliographicCitation | ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, v.124-126, pp.447 - + | - |
dc.relation.isPartOf | ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2 | - |
dc.citation.title | ADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2 | - |
dc.citation.volume | 124-126 | - |
dc.citation.startPage | 447 | - |
dc.citation.endPage | + | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | crystallization | - |
dc.subject.keywordAuthor | TFTs | - |
dc.subject.keywordAuthor | AMLCD | - |
dc.subject.keywordAuthor | AMOLED | - |
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