Performance Improvement of Organic Thin Film Transistors with Self-Assembled Monolayer Formed by ALD

Abstract

In this study, the effects of SAMs on the performance of OTFTs have been investigated. ALD technique was applied for the deposition of SAMs, which is an ultra-thin film deposition technique based on sequences of self-limiting surface reactions enabling thickness control on atomic scale. According to our investigation results, it is observed that the surface properties of the gate insulator was changed by SAMs, which allow pentacene molecules to be deposited in the upright direction on the gate insulator and hence the performance of OTFTs could be improved. These results will be discussed