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Activation Behavior of SLS and ELC Poly-Si after Ion Shower Doping
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ko, D.-Y. | - |
| dc.contributor.author | Ro, J.-S. | - |
| dc.date.accessioned | 2023-03-27T06:41:08Z | - |
| dc.date.available | 2023-03-27T06:41:08Z | - |
| dc.date.created | 2023-03-27 | - |
| dc.date.issued | 2019 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/31010 | - |
| dc.description.abstract | — Thermal activation was carried out using SLS (sequential lateral solidification) poly-Si or ELC (excimer laser crystallization) poly-Si after B+ ion shower doping. Reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between 400℃ and 650℃ investigated in this study. The SLS samples were observed to exhibit lower activation efficiency than the ELC ones. Grain boundaries seemed to play a critical role for dopant activation in poly-Si at low temperatures. The RTA (rapid thermal annealing) treated samples were observed to exhibit lower sheet resistance than the FA (furnace annealing) treated ones at a given annealing temperature. The reverse annealing is believed to play an important role for activation efficiency. © 2019 IJETAE Publication House. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IJETAE Publication House | - |
| dc.title | Activation Behavior of SLS and ELC Poly-Si after Ion Shower Doping | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Ro, J.-S. | - |
| dc.identifier.scopusid | 2-s2.0-85149423900 | - |
| dc.identifier.bibliographicCitation | International Journal of Emerging Technology and Advanced Engineering, v.9, no.7, pp.28 - 32 | - |
| dc.relation.isPartOf | International Journal of Emerging Technology and Advanced Engineering | - |
| dc.citation.title | International Journal of Emerging Technology and Advanced Engineering | - |
| dc.citation.volume | 9 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 28 | - |
| dc.citation.endPage | 32 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | Activation annealing | - |
| dc.subject.keywordAuthor | Boron | - |
| dc.subject.keywordAuthor | Crystallization | - |
| dc.subject.keywordAuthor | Ion shower doping | - |
| dc.subject.keywordAuthor | Poly-Si | - |
| dc.subject.keywordAuthor | Silicon | - |
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