Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3open access
- Authors
- Lee, Jaehyeok; Cho, Hyeongmin; Kim, Bongju; Jeong, Myoungho; Lee, Kiyoung; Char, Kookrin
- Issue Date
- 3-Oct-2022
- Publisher
- AIP Publishing
- Citation
- APPLIED PHYSICS LETTERS, v.121, no.14
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 121
- Number
- 14
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/32951
- DOI
- 10.1063/5.0116527
- ISSN
- 0003-6951
1077-3118
- Abstract
- As the size of the semiconductor device decreases, the importance of the low resistance contacts to devices cannot be overstated. Here, we studied the contact resistance to buried nanometer thick delta-doped Ba1-xLaxSnO3 (BLSO) layers. We have used epitaxial 4% (x = 0.04) BLSO as a contact material, which has additional advantages of forming Ohmic contacts to BaSnO3 and providing thermal stability even at high temperatures. The contact resistance was measured by a modified transmission line method designed to eliminate the contribution from the resistance of the contact material. The upper bound for the contact resistance to a 12 nm thick delta-doped 1% BLSO conductive layer was measured to be 1.25 x 10(-1)or 2.87 x 10(-7) omega cm(2). Our results show that it is possible to provide low resistance epitaxial edge contacts to an embedded nanometer-thick BLSO conductive layer using an ion-milling process. Our low resistance contact method can be easily extended to a two-dimensional electron gas at the oxide interfaces such as LaInO3/BaSnO3. Published under an exclusive license by AIP Publishing.
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