Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Jihan | - |
dc.contributor.author | Kim, Jaehyun | - |
dc.contributor.author | Poudel, Nirakar | - |
dc.contributor.author | Hou, Bingya | - |
dc.contributor.author | Shen, Lang | - |
dc.contributor.author | Shi, Haotian | - |
dc.contributor.author | Shi, Li | - |
dc.contributor.author | Cronin, Stephen | - |
dc.date.available | 2020-07-10T04:21:45Z | - |
dc.date.created | 2020-07-08 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/3328 | - |
dc.description.abstract | We report in-plane thermoelectric measurements of Bi2Te3 nanoplates, a typical topological insulator with Dirac-like metallic surface states, grown by chemical vapor deposition. The as-grown flakes exposed to ambient conditions exhibit relatively small thermopowers around -34 mu V/K due to unintentional surface doping (e.g., gas adsorption and surface oxidation). After removal of the unintentional surface doping and surface passivation by deposition of 30 nm of Al2O3 using atomic layer deposition (ALD), the Seebeck coefficient of these flakes increases by a factor of 5x to -169 mu V/K. Here, we believe that the ALD-based surface passivation can prevent the degradation of the thermoelectric properties caused by gas adsorption and surface oxidation processes, thus, reducing the unintentional doping in the Bi2Te3 and increasing the Seebeck coefficient. The high surface-to-volume ratio of these thin (similar to 10 nm thick) nanoplates make them especially sensitive to surface doping, which is a common problem among nanomaterials in general. An increase in the sample resistance is also observed after the ALD process, which is consistent with the decrease in doping. Published by AIP Publishing. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jaehyun | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.113, no.8, pp.083904 - 083904 | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 113 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 083904 | - |
dc.citation.endPage | 083904 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.