Strain-insensitive ferromagnetic SrRuO<sub>3</sub> thin films with ferrimagnetic CoFe<sub>2</sub>O<sub>4</sub> buffer layer
- Authors
- Hong, Jung Ehy; Choi, Yeong Uk; Ahn, Hyun Soo; Lama, Bhubnesh; Kim, Jong Hun; Paudel, Tula R.; Lee, Jung-Woo; Jung, Jong Hoon
- Issue Date
- Oct-2024
- Publisher
- ELSEVIER
- Keywords
- Mechanical strain; Magnetic property; Pulsed laser deposition
- Citation
- CURRENT APPLIED PHYSICS, v.66, pp 24 - 29
- Pages
- 6
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 66
- Start Page
- 24
- End Page
- 29
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/33349
- DOI
- 10.1016/j.cap.2024.06.012
- ISSN
- 1567-1739
1878-1675
- Abstract
- Flexible electronics, such as wearable devices and biosensors, require materials that maintain their properties under mechanical stress. A recent study addresses this by focusing on SrRuO3 (SRO) thin films, which typically suffer reduced coercivity under strain. Herein, we introduce a novel approach by using CoFe2O4 (CFO) as a buffer layer in SRO/CFO/F-mica heterostructures to address this issue. When subjected to a strain of up to +/- 0.553 %, these heterostructures displayed a mere 11 % variation in saturation magnetic moment and coercive field, significantly outperforming SRO/BaTiO3 configurations, which showed a 95 % reduction in coercivity at only -0.3 % strain. This result demonstrates the effectiveness of the CFO layer in stabilizing the magnetic properties of SRO films against external mechanical deformations. These findings mark a significant advancement in the development of mechanically robust thin films for complex oxide heterostructures in flexible device applications.
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