Field-effect-induced transport properties of Zn1-xMgxO nanocrystal solid solution
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Youngjun | - |
dc.contributor.author | Yang, Heesun | - |
dc.contributor.author | Park, Byoungnam | - |
dc.date.available | 2020-07-10T05:01:07Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2017-07-12 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5508 | - |
dc.description.abstract | We report electrical properties of Zn1-xMgxO nanocrystal solid solution ( NCSS) depending on the composition of Mg using a bottom-contact field-effect transistor. In the Zn1-xMgxO NCSS, as the composition of Mg increases, the field-effect mobility decreases with the threshold voltage shifting to a more positive value. The decrease in the field-effect mobility is attributed to the decrease in the size of the Zn1-xMgxO NCSS. The increase in the electron trap density in the Zn1-xMgxO NCSS with the addition of Mg caused a more positive threshold voltage shift. Change in the trap density as a function of Mg composition was demonstrated through comparison of the photoluminescence intensity. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | THIN-FILMS | - |
dc.subject | ZNO | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | ILLUMINATION | - |
dc.subject | FABRICATION | - |
dc.subject | CELLS | - |
dc.subject | OXIDE | - |
dc.title | Field-effect-induced transport properties of Zn1-xMgxO nanocrystal solid solution | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yang, Heesun | - |
dc.contributor.affiliatedAuthor | Park, Byoungnam | - |
dc.identifier.doi | 10.1088/1361-6463/aa715d | - |
dc.identifier.scopusid | 2-s2.0-85021194329 | - |
dc.identifier.wosid | 000404106800002 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.27 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 27 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | ILLUMINATION | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | nanocrystal | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | field-effect mobility | - |
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