Structure Optimization of ESD Diodes for Input Protection of CMOS RF ICs
- Authors
- Choi, Jin-Young
- Issue Date
- Jun-2017
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- ESD protection; diode protection device; mixed-mode simulation; parasitic bipolar transistor; RF ICs
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.17, no.3, pp.401 - 410
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 17
- Number
- 3
- Start Page
- 401
- End Page
- 410
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/5709
- DOI
- 10.5573/JSTS.2017.17.3.401
- ISSN
- 1598-1657
- Abstract
- In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the VDD and VSS buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.
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Collections - College of Science and Technology > Department of Electronic and Electrical Engineering > 1. Journal Articles
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