Activation Behavior of Phosphorus Doped Poly-Si
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 노재상 | - |
dc.date.available | 2020-07-10T05:22:29Z | - |
dc.date.created | 2020-07-08 | - |
dc.date.issued | 2017-01-31 | - |
dc.identifier.issn | 2250-2459 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/6151 | - |
dc.description.abstract | Abstract? Ion shower doping with a main ion source of P2Hx was conducted on ELA Poly-Si. The three different annealing methods were employed such as (i) FA (furnace annealing), (ii) ELA (excimer laser annealing) and (iii) RTA (rapid thermal annealing), respectively. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IJETAE | - |
dc.title | Activation Behavior of Phosphorus Doped Poly-Si | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 노재상 | - |
dc.identifier.bibliographicCitation | IJETAE, v.Vol. 8, no.Issue 1, pp.169 - 171 | - |
dc.relation.isPartOf | IJETAE | - |
dc.citation.title | IJETAE | - |
dc.citation.volume | Vol. 8 | - |
dc.citation.number | Issue 1 | - |
dc.citation.startPage | 169 | - |
dc.citation.endPage | 171 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314
COPYRIGHT 2020 HONGIK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.