Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Activation Behavior of Phosphorus Doped Poly-Si
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 노재상 | - |
| dc.date.available | 2020-07-10T05:22:29Z | - |
| dc.date.created | 2020-07-08 | - |
| dc.date.issued | 2017-01-31 | - |
| dc.identifier.issn | 2250-2459 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/6151 | - |
| dc.description.abstract | Abstract? Ion shower doping with a main ion source of P2Hx was conducted on ELA Poly-Si. The three different annealing methods were employed such as (i) FA (furnace annealing), (ii) ELA (excimer laser annealing) and (iii) RTA (rapid thermal annealing), respectively. We report the effects of annealing methods on dopant activation and damage recovery in ion-shower doped poly-Si | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IJETAE | - |
| dc.title | Activation Behavior of Phosphorus Doped Poly-Si | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 노재상 | - |
| dc.identifier.bibliographicCitation | IJETAE, v.Vol. 8, no.Issue 1, pp.169 - 171 | - |
| dc.relation.isPartOf | IJETAE | - |
| dc.citation.title | IJETAE | - |
| dc.citation.volume | Vol. 8 | - |
| dc.citation.number | Issue 1 | - |
| dc.citation.startPage | 169 | - |
| dc.citation.endPage | 171 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 1 | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.